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FS26 датащи(PDF) 27 Page - NXP Semiconductors

номер детали FS26
подробное описание детали  Safety system basis chip with low power for ASIL D/ASIL B
PDF  156 Pages
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производитель  NXP [NXP Semiconductors]
домашняя страница  http://www.nxp.com
Logo NXP - NXP Semiconductors

FS26 датащи(HTML) 27 Page - NXP Semiconductors

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NXP Semiconductors
FS26
Safety system basis chip with low power for ASIL D/ASIL B
The total standby mode current consumption can be estimated at either TA = 25 °C or TA = 85 °C using the
following formula:
where N is the number of LDOx used.
14.2 Standby mode current consumption
In most cases, LDO1 or LDO2 regulators are used in standby mode to supply light loads.
The total battery current consumption can be estimated using Figure 12 at TA = 25 °C and TA = 85 °C,
depending on the LDO1 or LDO2 load. The measurements have been done with the following assumptions:
• VSUP = VSUP_PWR = 12 V.
• LPRE = 10 µH
• Long duration timer disabled.
• GPIOx disabled in standby.
• RSTB released and pulled up to VPRE.
• FS0B = 0 and FS1B = 0, pulled up to a disabled supply in standby mode.
• LDO1 and LDO2 enabled.
• VLDO1 = 3.3 V, VLDO2 = 5 V and VPRE_PFM = 5.35 V.
• No external load on VPRE.
(µA)
IQ_Battery
_STBY
[1],[2]
Iout_LDO1 or 2 (µA)
0
100
80
40
60
20
aaa-045510
60
80
40
100
120
20
TA = 85 °C
TA = 25 °C
Figure 12. Total battery current consumption in standby mode
 
The total battery current consumption can also vary depending on the chosen inductor for LPRE. The additional
measurements shown in Section 14.2 were made using the following assumptions (see Figure 13):
• Long duration timer disabled
• GPIOx disabled in standby
• RSTB released and pulled up to VPRE
• VSUP = VSUP_PWR = 12 V
2
Guaranteed by characterization. Tested in production at 25 °C only.
FS26_SDS
All information provided in this document is subject to legal disclaimers.
© 2025 NXP B.V. All rights reserved.
Product short data sheet
Rev. 6.0 — 12 December 2025
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