LTO-DMS
MBR20100 thru MBR20200
20 Amp HT Power Schottky Barrier Rectifier
100 Volts to 200 Volts
Features
* High Junction Temperature Capability
* Low Leakage Current and Low Forward Voltage Drop
* Low Power Loss and High Efficiency
Maximum Ratings
* Operating Junction Temperature: 150°C
* Storage Temperature: - 55 °C to +175°C
* Per diode Thermal Resistance 2.2°C/W Junction to Case
Mechanical Data
* Case: Molded Plastic
* Terminals: Plated Lead Solderable per
MIL-STD-202, Method 208
* Marking:Type Number
* Weight: 2.24 grams (approx)
LTO-DMS Semiconductor Corporation
1468, 86th Street, Brooklyn
New York, 11228, USA
Tel: (718) 234 6010 / (707) 3223 4679
Fax:(718) 234 6013 / (707) 3223 6696
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
MAX
NOTE
A
0.560
0.625
14.22
15.88
B
0.380
0.420
9.65
10.67
C
0.100
0.135
2.54
3.43
D
0.230
0.270
5.84
6.86
E
0.380
0.420
9.65
10.67
F
------
0.250
-----
6.35
G
0.500
0.580
12.70
14.73
H
0.190
0.210
4.83
5.33
I
0.020
0.045
0.51
1.14
J
0.012
0.025
0.30
0.64
K
0.139
0.161
3.53
4.09
L
0.140
0.190
3.56
4.83
M
0.045
0.055
1.14
1.40
N
0.080
0.115
2.03
2.92
Symbol
Characteristics
MBR20100
MBR20150
MBR20200
Unit
VRRM
Maximum Recur
e Voltage
rent Peak Revers
100
150
200
V
VRM
Maximum DC Blocking Voltage
100
150
200
V
R(RMS
Maximum RMS Voltage
70
105
140
V
Maximum Forward Volt
IF=20A @TJ=25°C
Average Forward Cu
8.3ms Single Half-Sine-Wa
Superimposed On Rated Load
Voltage Rate Of Change (Rated
Maximum DC Reverse Current TJ=
At Rated DC Blocking Voltage
TJ=125°C
0.2
40
Typical Thermal Resistance (No
2)
2.0
CJ
Typical Junction Capacitance (Note 3)
400
pF
TJ
Operating Temperature Range
-55to+150
°C
STG
Storage Temperature Range
-55to+175
°C
NOTES:
ycle 2%.
.
rse Voltage Of 4.0V DC.
1. 300us Pulse Width, Duty C
V
)
VF
age Drop Per Element
0.90
0.95
V
IF(AV)
rrent
20
A
IFSM
ve
150
A
dv/dt
VR)
10000
V/us
IR
25°C
mA
RthJC
te
°C/ W
T
2. Thermal Resistance Junction To Case
3. Measured At 1.0MHz And Applied Reve
TO-220AC
Revision: 1
2002/06/17
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