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LM7805CK датащи(PDF) 2 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
номер детали LM7805CK
подробное описание детали  Voltage Regulators
PDF  6 Pages
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производитель  NSC [National Semiconductor (TI)]
домашняя страница  http://www.national.com
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LM7805CK датащи(HTML) 2 Page - National Semiconductor (TI)

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Absolute Maximum Ratings
If MilitaryAerospace specified devices are required
please contact the National Semiconductor Sales
OfficeDistributors for availability and specifications
Input Voltage (VO e 5V 12V and 15V)
35V
Internal Power Dissipation (Note 1)
Internally Limited
Operating Temperature Range (TA)0 Cto a70 C
Maximum Junction Temperature
(K Package)
150 C
(T Package)
150 C
Storage Temperature Range
b
65 Cto a150 C
Lead Temperature (Soldering 10 sec)
TO-3 Package K
300 C
TO-220 Package T
230 C
Electrical Characteristics LM78XXC (Note 2) 0 C s Tj s 125 C unless otherwise noted
Output Voltage
5V
12V
15V
Input Voltage (unless otherwise noted)
10V
19V
23V
Units
Symbol
Parameter
Conditions
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
VO
Output Voltage
Tj e 25 C 5mA s IO s 1A
48
5
52
115
12
125
144
15
156
V
PD s 15W 5 mA s IO s 1A
475
525
114
126 1425
1575
V
VMIN s VIN s VMAX
(75 s VIN s 20) (145 s VIN s 27)
(175 s VIN s 30)
V
D
VO
Line Regulation
IO e 500 mA Tj e 25 C
3
50
4
120
4
150
mV
D
VIN
(7 s VIN s 25)
145 s VIN s 30)
(175 s VIN s 30)
V
0 C s Tj s a125 C
50
120
150
mV
D
VIN
(8 s VIN s 20)
(15 s VIN s 27)
(185 s VIN s 30)
V
IO s 1A
Tj e 25 C
50
120
150
mV
D
VIN
(75 s VIN s 20) (146 s VIN s 27)
(177 s VIN s 30)
V
0 C s Tj s a125 C25
60
75
mV
D
VIN
(8 s VIN s 12)
(16 s VIN s 22)
(20 s VIN s 26)
V
D
VO
Load Regulation
Tj e 25 C5 mA s IO s 15A
10
50
12
120
12
150
mV
250 mA s IO s 750 mA
25
60
75
mV
5mA s IO s 1A 0 C s Tj s a125 C
50
120
150
mV
IQ
Quiescent Current
IO s 1A
Tj e 25 C8
8
8
mA
0 C s Tj s a125 C
85
85
85
mA
D
IQ
Quiescent Current
5 mA s IO s 1A
05
05
05
mA
Change
Tj e 25 C IO s 1A
10
10
10
mA
VMIN s VIN s VMAX
(75 s VIN s 20) (148 s VINs 27)
(179 s VIN s 30)
V
IO s 500 mA 0 C s Tj s a125 C
10
10
10
mA
VMIN s VIN s VMAX
(7 s VIN s 25)
(145 s VINs 30)
(175 s VIN s 30)
V
VN
Output Noise Voltage TA e25 C 10 Hz s f s 100 kHz
40
75
90
m
V
D
VIN
D
VOUT
Ripple Rejection
IO s 1A Tj e 25 Cor
62
80
55
72
54
70
dB
f e 120 Hz
IO s 500 mA
62
55
54
dB
0 C s Tj s a125 C
VMIN s VIN s VMAX
(8 s VIN s 18)
(15 s VIN s 25)
(185 s VIN s 285)
V
RO
Dropout Voltage
Tj e 25 C IOUT e 1A
20
20
20
V
Output Resistance
f e 1 kHz
8
18
19
mX
Short-Circuit Current Tj e 25 C
21
15
12
A
Peak Output Current Tj e 25 C
24
24
24
A
Average TC of VOUT 0 C s Tj s a125 C IO e 5 mA
06
15
18
mV C
VIN
Input Voltage
Required to Maintain Tj e 25 C IO s 1A
75
146
177
V
Line Regulation
Note 1
Thermal resistance of the TO-3 package (K KC) is typically 4 CW junction to case and 35 CW case to ambient Thermal resistance of the TO-220
package (T) is typically 4 CW junction to case and 50 CW case to ambient
Note 2
All characteristics are measured with capacitor across the input of 022 mF and a capacitor across the output of 01mF All characteristics except noise
voltage and ripple rejection ratio are measured using pulse techniques (tw s 10 ms duty cycle s 5%) Output voltage changes due to changes in internal
temperature must be taken into account separately
2



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