L6590 datasheet(2/23 Pages) STMICROELECTRONICS

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L6590

2/23

DESCRIPTION (continued)

The MOSFET is source-grounded, thus it is possible

to build flyback, boost and forward converters.

The device can work with secondary feedback and a

2.5V±2% internal reference, in addition to a high gain

error amplifier, makes possible also the use in appli-

cations either with primary feedback or not isolated.

The internal fixed oscillator frequency and the integrated

non dissipative start-up generator minimize the external

component count and power consumption.

The device is equipped with a standby function that

automatically reduces the oscillator frequency from

65 to 22 kHz under light load conditions to enhance

efficiency (Pin <1W @ Pout = 0.5W with wide range

mains).

Internal protections like cycle-by-cycle current limiting,

latched output overvoltage protection, mains undervolt-

age protection (SMD version only) and thermal shut-

down generate a 'robust' design solution.

The IC uses a special leadframe with the ground pins

(6, 7 and 8 in minidip, 9 to16 in SO16W package) in-

ternally connected in order for heat to be easily re-

moved from the silicon die. An heatsink can then be

realized by simply making provision of few cm2 of

copper on the PCB. Furthermore, the pin(s) close to

the high-voltage one are not connected to ease com-

pliance with safety distances on the PCB.

BLOCK DIAGRAM

PIN CONNECTIONS (Top view)

SUPPLY

&UVLO

OVP

OCP

2.5V

DRAIN

(1)

[1]

VCC

(3)

[4]

BOK

[6]

COMP

(4)

[7]

GND

(6,7,8)

PGND

[9, ..., 16]

VREF

BROWNOUT

PWM

STANDBY

START-UP

OSC

65/22 kHz

THERMAL

SHUTDOWN

2.5V

VFB

(5)

[8]

VREF

SGND

[5]

[x] : L6590D (SO16W)

VFB

DRAIN

N.C.

Vcc

COMP

GND

MINIDIP

L6590

DRAIN

N.C.

Vcc

SGND

BOK

COMP

VFB

PGND

SO16W

L6590D

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