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DS1972 датащи(PDF) 19 Page - Maxim Integrated Products |
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DS1972 датащи(HTML) 19 Page - Maxim Integrated Products |
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19 / 23 page ![]() 1024-Bit EEPROM iButton ______________________________________________________________________________________ 19 Improved Network Behavior (Switchpoint Hysteresis) In a 1-Wire environment, line termination is possible only during transients controlled by the bus master (1-Wire driver). 1-Wire networks, therefore, are suscep- tible to noise of various origins. Depending on the physical size and topology of the network, reflections from end points and branch points can add up or can- cel each other to some extent. Such reflections are visi- ble as glitches or ringing on the 1-Wire communication line. Noise coupled onto the 1-Wire line from external sources can also result in signal glitching. A glitch dur- ing the rising edge of a time slot can cause a slave device to lose synchronization with the master and, consequently, result in a Search ROM command com- ing to a dead end or cause a device-specific function command to abort. For better performance in network applications, the DS1972 uses a new 1-Wire front-end, which makes it less sensitive to noise. The DS1972’s 1-Wire front-end differs from traditional slave devices in three characteristics. 1) There is additional lowpass filtering in the circuit that detects the falling edge at the beginning of a time slot. This reduces the sensitivity to high-frequency noise. This additional filtering does not apply at overdrive speed. 2) There is a hysteresis at the low-to-high switching threshold VTH. If a negative glitch crosses VTH but does not go below VTH - VHY, it is not recognized (Figure 12, Case A). The hysteresis is effective at any 1-Wire speed. 3) There is a time window specified by the rising edge hold-off time tREH during which glitches are ignored, even if they extend below the VTH - VHY threshold (Figure 12, Case B, tGL < tREH). Deep voltage drops or glitches that appear late after crossing the VTH threshold and extend beyond the tREH window can- not be filtered out and are taken as the beginning of a new time slot (Figure 12, Case C, tGL ≥ tREH). Devices that have the parameters VHY and tREH speci- fied in their electrical characteristics use the improved 1-Wire front-end. CRC Generation The DS1972 uses two different types of CRCs. One CRC is an 8-bit type and is stored in the most signifi- cant byte of the 64-bit ROM. The bus master can com- pute a CRC value from the first 56 bits of the 64-bit ROM and compare it to the value stored within the DS1972 to determine if the ROM data has been received error-free. The equivalent polynomial function of this CRC is X8 + X5 + X4 + 1. This 8-bit CRC is received in the true (noninverted) form. It is computed at the factory and lasered into the ROM. The other CRC is a 16-bit type, generated according to the standardized CRC-16 polynomial function X16 + X15 + X2 + 1. This CRC is used for fast verification of a data transfer when writing to or reading from the scratchpad. In contrast to the 8-bit CRC, the 16-bit CRC is always communicated in the inverted form. A CRC generator inside the DS1972 iButton (Figure 13) calculates a new 16-bit CRC, as shown in the command flowchart (Figure 7). The bus master compares the CRC value read from the device to the one it calculates from the data and decides whether to continue with an operation or to reread the portion of the data with the CRC error. With the Write Scratchpad command, the CRC is gen- erated by first clearing the CRC generator and then shifting in the command code, the target addresses TA1 and TA2, and all the data bytes as they were sent VPUP VTH VHY 0V tREH tGL tREH tGL CASE A CASE C CASE B Figure 12. Noise Suppression Scheme |
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