поискавой системы для электроныых деталей
  Russian  ▼
ALLDATASHEETRU.COM

X  

Preview PDF HTML

H173N4HD датащи(PDF) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

номер детали H173N4HD
подробное описание детали  40V SGT Single N-Channel MOSFET
PDF  6 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
производитель  HUIXIN [Guangdong Huixin Electronic Technology Co., Ltd.]
домашняя страница  http://www.hxkj.hk
Logo HUIXIN - Guangdong Huixin Electronic Technology Co., Ltd.

H173N4HD датащи(HTML) 2 Page - Guangdong Huixin Electronic Technology Co., Ltd.

  H173N4HD Datasheet HTML 1Page - Guangdong Huixin Electronic Technology Co., Ltd. H173N4HD Datasheet HTML 2Page - Guangdong Huixin Electronic Technology Co., Ltd. H173N4HD Datasheet HTML 3Page - Guangdong Huixin Electronic Technology Co., Ltd. H173N4HD Datasheet HTML 4Page - Guangdong Huixin Electronic Technology Co., Ltd. H173N4HD Datasheet HTML 5Page - Guangdong Huixin Electronic Technology Co., Ltd. H173N4HD Datasheet HTML 6Page - Guangdong Huixin Electronic Technology Co., Ltd.  
Zoom Inzoom in Zoom Outzoom out
 2 / 6 page
background image
+86-769-22857832
huixin@hx kj.hk
Rev.01
Page 2 of 6
Electrical Characteristics ( TJ= 25℃ unless otherwise specified)
Symbol
Parameter
Min.
Typ. Max. Units
Test Conditions
V(BR)DSS Drain- Source Breakdown Voltage
40
--
--
V
VGS=0V,ID=250µA
IDSS
Zero Gate Voltage Drain Current (25℃)
--
--
1
µA
VDS=40V,VGS=0V
Zero Gate Voltage Drain Current (100℃)
--
--
100
µA
VDS=40V,VGS=0V
IGSS
Gate to Source Forward Leakage
--
--
100
nA
VGS=20V ,VDS=0V
Gate to Source Reverse Leakage
--
--
-100
VGS=-20V ,VDS=0V
VGS(TH) Gate Threshold Voltage
2.0
3.4
4.0
V
VGS=VDS,ID=250µA
RDS(on) Static Drain- to- Source On-
Resistance
--
1.9
2.3
mΩ
VGS=10V,ID=20A
Dynamic Electrical Characteristics
Ciss
Input Capacitance
--
4980
--
pF
VGS=0V
VDS=20V
f=1MHz
Coss
Output Capacitance
--
905
--
Crss
Reverse Transfer Capacitance
--
98
--
Rg
Gate Resistance
--
1
--
Ω
f=1MHz
Qg
Total Gate Charge
--
72
--
nC
VDS=20V
ID=20A
VGS=10V
Qgs
Gate- to- Source Charge
--
20
--
Qgd
Gate-to-Drain(" Miller") Charge
--
15
--
Switching Characteristics
td(ON)
Turn- on Delay Time
--
21
--
nS
VDS=20V
ID=20A
VGS=10V
RG=10Ω
trise
Rise Time
--
11
--
td(OFF) Turn- OFF Delay Time
--
29
--
tfall
Fall Time
--
8
--
Source- Drain Diode Characteristics
VSD
Diode Forward Voltage
--
--
1.2
V
IF=20A,VGS=0V
trr
Reverse Recovery Time
--
41
--
nS
VR=20V,IF=20A
di/dt=100A/µs
Qrr
Reverse Recovery Charge
--
41
--
nC
Notes:
* 1. Repetitive rating, pulse width limited by maximum junction temperature.
* 2. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%



Html Pages

1 2 3 4 5 6


датащи скачать

Go To PDF Page


ссылки URL



Вашему бизинису помогли Аллдатащит?  [ DONATE ] 

Что такое Аллдатащит   |   реклама   |   контакт   |   Конфиденциальность   |   Ссылка на техническое описание    |   обмен ссыками   |   поиск по производителю
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com