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Rev.01

Page 2 of 5

(

)

Electrical Characteristics T =25

unless otherwise specified

J

°C

Parameter

V

Unit

V(

)

B R D S S

V

(

)

G S t h

IDSS

Ciss

Symbols

Drain-Source Breakdown Voltage

Gate Threshold Voltage

60

Typ.

Test Conditions

V

=0, I =250u A

G S

D

td(on)

tf

Max.

Min.

V

2.0

4.0

V

=V

, I =250u A

G S

D S

D

Zero Gate Voltage Drain Current

Gate-Source Leakage Current

V

=0, V

=±20V

D S

G S

nA

±100

295

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

9000

4170

pF

V

=0

G S

V

=25V

D S

f=100kHz

Turn-On Delay Time

Rise Time

Turn-Of f Delay Time

Fall Time

28

21

65

32

ns

V

=30V

D S

10V

V

=

G S

I =100A

D

2Ω

R

=

G ( e x t )

Total Gate Charge

Gate to Source Charge

Gate to Drain (Miller) Charge

135

40

31

nC

V

=30V

D S

10V

V

=

G S

I =100A

D

μA

V

=60V, V

=0,T =25°C

D S

G S

J

1

Body Diode Characteristics

Parameter

Unit

VSD

Symbols

Diode Forward Voltage

Typ.

Test Conditions

V

=0, I =50A

G S

S

Max.

V =30V

R

I =100Α

S

di/dt=100A/μs

ns

nC

88

Qrr

Reverse Recover Time

Reverse Recovery Charge

154

Min.

V

R

(

)

D S o n

Drain-Source On-State Resistance

1.3

1.7

mΩ

V

=10V, I =50A,T =25°C

G S

D

J

IGSS

Gate resistance

RG

2.4

f = 1 MHz, Open drain

Ω

Coss

Crss

Gate plateau voltage

Vplateau

5.0

V

Qg

Qgs

Qgd

tr

td(off)

1.3

A

Irrm

Peak reverse recovery current

3.2

trr

Note

( )

1 Calculated continuous current based on maximum allowable junction temperature.

( )

2 Repetitive rating; pulse width limited by max. junction temperature.

( )

3 Pd is based on max. junction temperature, using junction-case thermal resistance.

( )

4 V

=50V,V

=10 V, L=0.3 mH, starting T =25 °C

D D

G S

J