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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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FS100R07N2E4BOSA1 датащи(PDF) 2 Page - Infineon Technologies AG |
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FS100R07N2E4BOSA1 датащи(HTML) 2 Page - Infineon Technologies AG |
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2 / 9 page  2 TechnischeInformation/TechnicalInformation FS100R07N2E4 IGBT-Module IGBT-modules preparedby:AS approvedby:RS dateofpublication:2013-11-06 revision:2.0 VorläufigeDaten PreliminaryData IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues Kollektor-Emitter-Sperrspannung Collector-emittervoltage Tvj = 25°C VCES 650 V Kollektor-Dauergleichstrom ContinuousDCcollectorcurrent TC = 70°C, Tvj max = 175°C IC nom 100 A PeriodischerKollektor-Spitzenstrom Repetitivepeakcollectorcurrent tP = 1 ms ICRM 200 A Gesamt-Verlustleistung Totalpowerdissipation TC = 25°C, Tvj max = 175°C Ptot 335 W Gate-Emitter-Spitzenspannung Gate-emitterpeakvoltage VGES +/-20 V CharakteristischeWerte/CharacteristicValues min. typ. max. Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V IC = 100 A, VGE = 15 V VCE sat 1,55 1,70 1,75 1,95 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,60 mA, VCE = VGE, Tvj = 25°C VGEth 5,0 5,8 6,5 V Gateladung Gatecharge VGE = -15 V ... +15 V QG 1,00 µC InternerGatewiderstand Internalgateresistor Tvj = 25°C RGint 2,0 Ω Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cies 6,20 nF Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Cres 0,19 nF Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 650 V, VGE = 0 V, Tvj = 25°C ICES 1,0 mA Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE = 20 V, Tvj = 25°C IGES 400 nA Einschaltverzögerungszeit,induktiveLast Turn-ondelaytime,inductiveload IC = 100 A, VCE = 300 V VGE = ±15 V RGon = 3,3 Ω td on 0,07 0,08 0,08 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Anstiegszeit,induktiveLast Risetime,inductiveload IC = 100 A, VCE = 300 V VGE = ±15 V RGon = 3,3 Ω tr 0,02 0,02 0,02 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Abschaltverzögerungszeit,induktiveLast Turn-offdelaytime,inductiveload IC = 100 A, VCE = 300 V VGE = ±15 V RGoff = 3,3 Ω td off 0,26 0,29 0,30 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C Fallzeit,induktiveLast Falltime,inductiveload IC = 100 A, VCE = 300 V VGE = ±15 V RGoff = 3,3 Ω tf 0,07 0,07 0,07 µs µs µs Tvj = 25°C Tvj = 125°C Tvj = 150°C EinschaltverlustenergieproPuls Turn-onenergylossperpulse IC = 100 A, VCE = 300 V, LS = 30 nH VGE = ±15 V, di/dt = 5100 A/µs (Tvj = 150°C) RGon = 3,3 Ω Eon 0,33 0,77 0,88 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C AbschaltverlustenergieproPuls Turn-offenergylossperpulse IC = 100 A, VCE = 300 V, LS = 30 nH VGE = ±15 V, du/dt = 4000 V/µs (Tvj = 150°C) RGoff = 3,3 Ω Eoff 3,50 4,70 4,90 mJ mJ mJ Tvj = 25°C Tvj = 125°C Tvj = 150°C Kurzschlußverhalten SCdata VGE ≤ 15 V, VCC = 360 V VCEmax = VCES -LsCE ·di/dt ISC 480 380 A A Tvj = 25°C Tvj = 150°C tP ≤ 10 µs, tP ≤ 10 µs, Wärmewiderstand,ChipbisGehäuse Thermalresistance,junctiontocase proIGBT/perIGBT RthJC 0,45 K/W Wärmewiderstand,GehäusebisKühlkörper Thermalresistance,casetoheatsink proIGBT/perIGBT λPaste=1W/(m·K)/λgrease=1W/(m·K) RthCH 0,19 K/W TemperaturimSchaltbetrieb Temperatureunderswitchingconditions Tvj op -40 150 °C |
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