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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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OP07CP датащи(PDF) 4 Page - Analog Devices |
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OP07CP датащи(HTML) 4 Page - Analog Devices |
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4 / 16 page  OP07 Rev. D | Page 4 of 16 Parameter Symbol Conditions Min Typ Max Unit DYNAMIC PERFORMANCE TA = 25°C Slew Rate SR RL ≥ 2 kΩ3 0.1 0.3 V/μs Closed-Loop Bandwidth BW AVOL = 15 0.4 0.6 MHz Open-Loop Output Resistance RO VO = 0, IO = 0 60 Ω Power Consumption Pd VS = ±15 V, No load 75 120 mW VS = ±3 V, No load 4 6 mW Offset Adjustment Range RP = 20 kΩ ±4 mV 1 Input offset voltage measurements are performed by automated test equipment approximately 0.5 seconds after application of power. 2 Long-term input offset voltage stability refers to the averaged trend time of VOS vs. the time over extended periods after the first 30 days of operation. Excluding the initial hour of operation, changes in VOS during the first 30 operating days are typically 2.5 μV. Refer to the Typical Performance Characteristics section. Parameter is sample tested. 3 Sample tested. 4 Guaranteed by design. 5 Guaranteed but not tested. OP07C ELECTRICAL CHARACTERISTICS VS = ±15 V, unless otherwise noted. Table 2. Parameter Symbol Conditions Min Typ Max Unit INPUT CHARACTERISTICS TA = 25°C Input Offset Voltage1 VOS 60 150 μV Long-Term VOS Stability2 VOS/Time 0.4 2.0 μV/Month Input Offset Current IOS 0.8 6.0 nA Input Bias Current IB ±1.8 ±7.0 nA Input Noise Voltage en p-p 0.1 Hz to 10 Hz3 0.38 0.65 μV p-p Input Noise Voltage Density en fO = 10 Hz 10.5 20.0 nV/√Hz fO = 100 Hz3 10.2 13.5 nV/√Hz fO = 1 kHz 9.8 11.5 nV/√Hz Input Noise Current In p-p 15 35 pA p-p Input Noise Current Density In fO = 10 Hz 0.35 0.90 pA/√Hz fO = 100 Hz3 0.15 0.27 pA/√Hz fO = 1 kHz 0.13 0.18 pA/√Hz Input Resistance, Differential Mode4 RIN 8 33 MΩ Input Resistance, Common Mode RINCM 120 GΩ Input Voltage Range IVR ±13 ±14 V Common-Mode Rejection Ratio CMRR VCM = ±13 V 100 120 dB Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 7 32 μV/V Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 120 400 V/mV RL ≥ 500 Ω, VO = ±0.5 V, VS = ±3 V4 100 400 V/mV −40°C ≤ TA ≤ +85°C Input Offset Voltage1 VOS 85 250 μV Voltage Drift Without External Trim4 TCVOS 0.5 1.8 μV/°C Voltage Drift with External Trim3 TCVOSN RP = 20 kΩ 0.4 1.6 μV/°C Input Offset Current IOS 1.6 8.0 nA Input Offset Current Drift TCIOS 12 50 pA/°C Input Bias Current IB ±2.2 ±9.0 nA Input Bias Current Drift TCIB 18 50 pA/°C Input Voltage Range IVR ±13 ±13.5 V Common-Mode Rejection Ratio CMRR VCM = ±13 V 97 120 dB Power Supply Rejection Ratio PSRR VS = ±3 V to ±18 V 10 51 μV/V Large Signal Voltage Gain AVO RL ≥ 2 kΩ, VO = ±10 V 100 400 V/mV |
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