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2SC4083 датащи(PDF) 2 Page - Rohm

номер детали 2SC4083
подробное описание детали  High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
PDF  10 Pages
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производитель  ROHM [Rohm]
домашняя страница  http://www.rohm.com
Logo ROHM - Rohm

2SC4083 датащи(HTML) 2 Page - Rohm

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2SC4083
　
　 　
　 　
　 　
　　
　 　
　 　 　 　 　 　 　 　
Datasheet
l
lAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Values
Unit
Collector-base voltage
VCBO
20
V
Collector-emitter voltage
VCEO
11
V
Emitter-base voltage
VEBO
3
V
Collector current
IC
50
mA
Power dissipation
PD*1
200
mW
Junction temperature
Tj
150
℃
Range of storage temperature
Tstg
-55 to +150
℃
l
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Values
Unit
Min.
Typ.
Max.
Collector-base breakdown
voltage
BVCBO
IC = 10μA
20
-
-
V
Collector-emitter breakdown
voltage
BVCEO
IC = 1mA
11
-
-
V
Emitter-base breakdown voltage
BVEBO
IE = 10μA
3
-
-
V
Collector cut-off current
ICBO
VCB = 10V
-
-
500
nA
Emitter cut-off current
IEBO
VEB = 2V
-
-
500
nA
Collector-emitter saturation voltage
VCE(sat) IC = 10mA, IB = 5mA
-
-
500
mV
DC current gain
hFE
VCE = 10V, IC = 5mA
56
-
270
-
Transition frequency
fT
VCE = 10V, IE = -10mA,
f = 500MHz
1.4
3.2
-
GHz
Output capacitance
Cob
VCB = 10V, IE = 0A,
f = 1MHz
-
0.8
1.5
pF
Noise figure
NF
VCB = 6V, IC = 2mA
f = 500MHz, Rg = 50Ω
-
3.5
-
dB
hFE values are calssified as follows :
rank
N
P
Q
-
-
hFE
56-120
82-180
120-270
-
-
*1 Each terminal mounted on a reference land.
　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　
　
　　 　 　 　　　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　
www.rohm.com
© 2015 ROHM Co., Ltd. All rights reserved.
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20150909 - Rev.002



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