3-53
3
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
4
GND2
RF OUT
5
3
VPD
2
GND1
1
RF IN
RF2364
3V PCS LOW NOISE AMPLIFIER
The RF2364 is a low noise amplifier with a high dynamic range designed for CDMA
and TDMA PCS, as well as W-CDMA/CDMA2000 applications. The device functions
as an outstanding front end low noise amplifier and the bias current can be set
externally. The IC includes a power down feature used to completely turn-off the
device and is featured in a standard SOT 5-lead plastic package.
Features
Low Noise and High Intercept
Point
18dB Gain
Power Down Control
Single 3.0V Power Supply
PCS and W-CDMA Band Opera-
tion
1.8GHz to 2.5GHz Operation
Applications
CDMA PCS LNA
TDMA PCS LNA
W-CDMA/CDMA2000 LNA
General Purpose Amplification
Commercial and Consumer Sys-
tems
RF2364
3V PCS Low Noise Amplifier
RF2364 PCBA
Fully Assembled Evaluation Board
Rev A5 DS020827
RF23643V
PCS Low Noise
Amplifier
Package Style: SOT 5-Lead
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