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STM32L433CB датащи(PDF) 112 Page - STMicroelectronics |
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STM32L433CB датащи(HTML) 112 Page - STMicroelectronics |
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112 / 227 page ![]() Electrical characteristics STM32L433xx 112/19 DS11449 Rev 7 Table 39. Typical current consumption in Run, with different codesrunning from SRAM1 and power supplied by external SMPS (VDD12 = 1.10 V) Symbol Parameter Conditions(1) TYP Unit TYP Unit - Voltage scaling Code 25 °C 25 °C IDD_ALL (Run) Supply current in Run mode fHCLK = fHSE up to 48 MHz included, bypass mode PLL ON above 48 MHz all peripherals disable Reduced code(2) 1.04 mA 40 µA/MHz Coremark 0.94 36 Dhrystone 2.1 1.04 40 Fibonacci 1.04 40 While(1) 0.99 38 Reduced code(2) 3.10 39 Coremark 2.79 35 Dhrystone 2.1 3.07 38 Fibonacci 3.08 38 While(1) 2.92 36 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.10 V 2. Reduced code used for characterization results provided in Table 26, Table 28, Table 30. Table 40. Typical current consumption in Run, with different codesrunning from SRAM1 and power supplied by external SMPS (VDD12 = 1.05 V) Symbol Parameter Conditions(1) TYP Unit TYP Unit - Voltage scaling Code 25 °C 25 °C IDD_ALL (Run) Supply current in Run mode fHCLK = fHSE up to 48 MHz included, bypass mode PLL ON above 48 MHz all peripherals disable Reduced code(2) 0.95 mA 37 µA/MHz Coremark 0.86 33 Dhrystone 2.1 0.94 36 Fibonacci 0.94 36 While(1) 0.90 35 1. All values are obtained by calculation based on measurements done without SMPS and using following parameters: SMPS input = 3.3 V, SMPS efficiency = 85%, VDD12 = 1.05 V 2. Reduced code used for characterization results provided in Table 26, Table 28, Table 30. |
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