Isolated Schottky Barrier Rectifiers

www.Microsemi.com

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Copyright

© 2010

June 2010 Rev B

MBR3040FCT to MBR30200FCT

Main product characteristics

Features and benefits

• Plastic package with UL 94V-0 flammability classification

• Flame retardant epoxy molding component

• Guardring for overvoltage protection

• Low power loss, high efficiency

• RoHS compliant (2002/95/EC)

Description and applications

Double Schottky configuration for use in low voltage, high frequency inverters, free wheeling and

polarity protection applications. The Metal silicon junction means the devices are majority carrier conduction

leading to low power loss and high efficiency.

Electrical characteristics

(1)

Symbol

Parameter

Unit

VRRM

Max Peak Repetitive Reverse Voltage

40

45

50

60

80

90

100

150

200

V

VR(RMS)

Max RMS Reverse Voltage

28

31.5

35

42

56

63

70

105

140

V

VR

Max DC Blocking Voltage

40

45

50

60

80

90

100

150

200

V

IF(AV)

Max average forward current (see fig.1)

30

A

IFSM

Non repetitive peak forward surge current

(8.3ms single half sine wave)

275

A

VF

Max forward voltage @ 15A (per leg)

0.70

0.75

0.80

0.90

V

Maximum instantaneous

TJ = 25ºC

0.05

IR

(2)

reverse current at rated VR

TJ = 125ºC

20

mA

TSTG, TJ

Storage and Junction temperature

-55 to +150

-65 to +175

ºC

(1) All ratings at 25ºC unless specified otherwise

(2) Measured with a test pulse of 380µs to minimize self-heating effect

IF(AV)

30A (2 x 15A)

VRRM

40V to 200V

Tj(MAX)

175ºC

ITO-220AB

RoHS

COMPLIANT

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