1 of 12
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
RF MEMS
16
1
13
14
15
GND
GND
RF IN
2
3
4
9
8
7
6
5
RF OUT
RF OUT
RF OUT
12
11
10
RF2192
3V 900MHz LINEAR POWER AMPLIFIER
The RF2192 is a high-power, high-efficiency linear amplifier IC targeting 3V hand-
held systems. The device is manufactured on an advanced Gallium Arsenide Het-
erojunction Bipolar Transistor (HBT) process, and has been designed for use as the
final RF amplifier in dual-mode 3V CDMA/AMPS and CDMA2000 handheld digital
cellular equipment, spread-spectrum systems, and other applications in the
800MHz to 960MHz band. The RF2192 has a low power mode to extend battery
life under low output power conditions. The device is packaged in a 16-pin,
4mmx4mm QFN.
Features
Single 3V Supply
29dBm Linear Output Power
37% Linear Efficiency
Low Power Mode
45 mA idle current
47% Peak Efficiency 31dBm Out-
put
Applications
3V CDMA/AMPS Cellular Hand-
sets
3V JCDMA Cellular Handsets
3V CDMA2000 Cellular Hand-
sets
3V TDMA/GAIT Cellular Hand-
sets
3V CDMA 450MHz Band Hand-
sets
Portable Battery-Powered Equip-
ment
RF2192
3V 900MHz Linear Power Amplifier
RF2192PCBA-41X
Fully Assembled Evaluation Board
Rev A8 DS060918
RF21923V
900MHz Lin-
ear Power
Amplifier
RoHS Compliant & Pb-Free Product
Package Style: QFN, 16-Pin, 4 x 4
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