BUR52A datasheet(1/2 Pages) ISC

номер детали	BUR52A

подробное описание детали	Silicon NPN Power Transistor

PDF	2 Pages

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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Silicon NPN Power Transistor

BUR52A

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 250V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat): 1.0V(Max) @IC= 25A

APPLICATIONS

· Switching Regulators

· Converters

· Power Amplifiers

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

350

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

10

V

IC

Collector Current-Continuous

60

A

ICM

Collector Current-Pulse

80

A

Ptot

Total Power Dissipation

@ TC=25℃

350

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature Range

-65~200

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

0.5

℃

/W

3

Аналогичный номер детали - BUR52A

производитель	номер детали	датащи	подробное описание детали
STMicroelectronics	BUR52	62Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTOR Jun-1997
Comset Semiconductor	BUR52	121Kb / 4P	HIGH CURRENT NPN SILICON TRANSISTORS
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Аналогичное описание - BUR52A

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Advanced Semiconductor	MRF342	145Kb / 1P	SILICON POWER NPN TRANSISTOR
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