1 of 2
Optimum Technology Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
Functional Block Diagram
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
Ordering Information
RF IN
VGQ
Pin 1 (CUT)
RF OUT
VDQ
Pin 2
GND
BASE
RF3933
GaN WIDE-BAND POWER AMPLIFIER
The RF3933 is designed for commercial infrastructure, cellular and
WiMAX infrastructure and general purpose broadband amplifier applica-
tions. Using an advanced high power density Gallium Nitride (GaN) semi-
conductor process, these high-performance amplifiers achieve high
efficiency and flat gain over a broad frequency range in a single amplifier
design. The RF3933 is an unmatched GaN transistor packaged in a
flanged ceramic package which provides excellent thermal stability
through the use of advanced heat sink and power dissipation technolo-
gies. Ease of integration is accomplished through the incorporation of sim-
ple, optimized matching networks external to the package that provide
wideband gain and power performance in a single amplifier.
Features
Peak Power=90W
Gain=14dB
Advanced GaN HEMT Tech-
nology
48V Operation
Optimized Evaluation Board
Layout for 50
Ω Operation
Applications
Commercial Wireless Infra-
structure
Cellular and WiMAX Infra-
structure
General Purpose Broadband
Amplifiers
Public Mobile Radios
Industrial, Scientific and Med-
ical
RF3933
GaN Wide-Band Power Amplifier
Prelim DSB070828
Proposed
RoHS Compliant and Pb-Free Product
Package Style: Flanged Ceramic
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