MOSFET

Min

Unit

Off Characteristics

Drain-source breakdown voltage

Zero gate voltage drain current

Gate-body leakage current

On Characteristics (Note 3)

Gate threshold voltage

BVDSS

IDSS

IGSS

VGS(th)

100

1

±100

1.2

2.5

V

µA

nA

S

V

Parameter

Condition

Unit

Electrical Characteristics ( Ta=25°C unless otherwise noted )

Max

Typ

110

Symbol

190

Drain-source on-state resistance

Forward transconductance

Dynamic Characteristics (Note 4)

Input capacitance

RDS(ON)

gFS

Ciss

210

1

22

13

mΩ

pF

VGS = 0V, ID = 250µA

VDS = 100V, VGS = 0V

VDS = VGS, ID = 250µA

VGS = ±20V, VDS = 0V

Switching Characteristics (Note 4)

Turn-on delay time

td(on)

6

10

10

nS

Output capacitance

Coss

Reverse transfer capacitance

Turn-on rise time

Crss

Turn-off delay time

Turn-off fall time

tf

6

5.2

Total gate charge

1.4

Gate-drain charge

Drain-Source Diode Characteristics

Diode forward voltage (Note 3)

VSD

0.75

1.2

2

nC

V

A

Notes:

tr

td(off)

Gate-source charge

Qg

Qgs

Qgd

IS

VGS = 10V, ID = 1A

VDS = 50V, VGS = 0, f = 1MHz

1.8

240

VDS = 5V, ID = 1A

VDD = 50V, ID = 1.3A, RL = 39Ω,

VGS = 10V, RG = 1Ω

VGS = 0V, IS = 1.3A

VDS = 50V, ID = 1.3A, VGS = 10V

Diode forward current (Note 2)

1. Repetitive rating: Pulse width limited by maximum junction temperature.

2. Surface mounted on FR4 board, t ≤ 10 sec.

3. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2% .

4. Guaranteed by design, not subject to production.

Comchip Technology CO., LTD.

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