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US3881ESE датащи(PDF) 5 Page - Melexis Microelectronic Systems

номер детали US3881ESE
подробное описание детали  Hall Latch Low Voltage & High Sensitivity
PDF  11 Pages
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производитель  MELEXIS [Melexis Microelectronic Systems]
домашняя страница  http://www.melexis.com
Logo MELEXIS - Melexis Microelectronic Systems

US3881ESE датащи(HTML) 5 Page - Melexis Microelectronic Systems

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US3881
Hall Latch
Low Voltage & High Sensitivity
3901003881
Page 5 of 11
Data Sheet
Rev 014
Feb/06
9 Detailed General Description
Based on mixed signal CMOS technology, Melexis US3881 is a Hall-effect device with high magnetic
sensitivity. This multi-purpose latch suits most of the application requirements.
The chopper-stabilized amplifier uses switched capacitor techniques to suppress the offset generally
observed with Hall sensors and amplifiers. The CMOS technology makes this advanced technique possible
and contributes to smaller chip size and lower current consumption than bipolar technology. The small chip
size is also an important factor to minimize the effect of physical stress.
This combination results in more stable magnetic characteristics and enables faster and more precise design.
The operating voltage from 2.2V to 18V, low current consumption and large choice of operating temperature
range according to “L”, “K” and “E” specification make this device suitable for automotive, industrial and
consumer low voltage applications.
The output signal is open-drain type. Such output allows simple connectivity with TTL or CMOS logic by using
a pull-up resistor tied between a pull-up voltage and the device output.
10 Unique Features
The US3881 exhibits latch magnetic switching characteristics. Therefore, it requires both south and north
poles to operate properly.
SE package - Latch characteristic
UA package - Latch characteristic
The device behaves as a latch with symmetric operating and release switching points (BOP=|BRP|). This
means magnetic fields with equivalent strength and opposite direction drive the output high and low.
Removing the magnetic field (B→0) keeps the output in its previous state. This latching property defines the
device as a magnetic memory.
A magnetic hysteresis BHYST keeps BOP and BRP separated by a minimal value. This hysteresis prevents
output oscillation near the switching point.



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