| поискавой системы для электроныых деталей |
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ES1GL датащи(PDF) 1 Page - Multicomp Pro |
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ES1GL датащи(HTML) 1 Page - Multicomp Pro |
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1 / 3 page ![]() Page <1> V1.0 07/09/22 Rectifier Diodes Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Features • Ideal for Automated Placement • Low profile space • Glass Passivated Chip Junctions • Low reverse leakage current • High current capability • Low forward voltage drop Mechanical Data • Case: JEDEC SOD-123FL Molded plastic • Polarity: Colour band denotes cathode • Mounting position: Any Applications • For use in SMPS, high frequency inverters, PWM and polarity protection applications Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristics Symbol ES1DL ES1GL Unit Marking E1DL E1GL Maximum Repetitive Peak Reverse Voltage VRRM 200 400 V Maximum RMS Voltage VRMS 140 280 Maximum DC Blocking voltage VDC 200 400 Maximum Average Forward Rectified Current @TA=55°C I(AV) 1 A Peak Forward Surge Current, 8.3mS Single Half Sine-Wave, Superimposed on Rated Load (JEDEC Method) IFSM 25 Peak Forward Voltage at 1.0A DC (Note1) VF 0.95 1.25 V Maximum DC Reverse Current @TJ=25°C at Rated DC Blocking Voltage @TJ=100°C IR 5 μA 150 Maximum Reverse recovery time @IF=0.5A,IR=1.0A,Irr=0.25A trr 35 nS Typical Thermal Resistance Junction to Ambient RθJA 150 °C/W Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 NOTE: 1. Mounted on FR-4 P.C.B. With 0.9x1.5 mm copper pad areas (≈35 μm thick) 2. The typical data above is for reference only. |
Аналогичный номер детали - ES1GL |
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Аналогичное описание - ES1GL |
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