1

Characteristics

Table 1. Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage (Tj = -40 °C to +175 °C)

1200

V

EAS(1)

Single pulse avalanche energy, starting Tj = 25 °C, IAS = 5.9 A, L = 10 mH

174

mJ

IF(RMS)

Forward rms current

64

A

IF(AV)

Average forward current

Tc = 150 °C, δ = 1

20

A

IFRM

Repetitive peak forward current

Tc = 150 °C, Tj = 175 °C, δ = 0.1, fsw > 10 kHz

76

A

IFSM

Surge non repetitive forward current

tp = 10 ms sinusoidal

Tc = 25 °C

180

A

Tc = 150 °C

160

tp = 10 µs square

Tc = 25 °C

1100

Tstg

Storage temperature range

-65 to +175

°C

Tj

Operating junction temperature range

-55 to +175

°C

1. Please refer to Figure 1.

Table 2. Thermal resistance parameters

Symbol

Parameter

Value

Unit

Typ.

Max.

Rth(j-c)

Junction to case

0.45

0.60

°C/W

For more information, please refer to the following application note:

•

AN5088 : Rectifiers thermal management, handling and mounting recommendations

Table 3. Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR (1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

-

10

150

µA

Tj = 150 °C

-

33

500

Tj = 175 °C

75

VF (2)

Forward voltage drop

Tj = 25 °C

IF = 20 A

-

1.35

1.50

V

Tj = 150 °C

-

1.75

2.10

Tj = 175 °C

1.90

1. Pulse test: tp = 10 ms, δ < 2%

2. Pulse test: tp = 380 µs, δ < 2%

To evaluate the conduction losses, use the following equation:

P = 0.924 x IF(AV) + 0.059 x IF 2(RMS)

For more information, please refer to the following application notes related to the power losses:

•

AN604: Calculation of conduction losses in a power rectifier

•

AN4021: Calculation of reverse losses on a power diode

STPSC20G12

Characteristics

DS14114 - Rev 1

page 2/10