Table 4. Dynamic characteristics (per diode)

Symbol

Parameters

Test conditions

Min. Typ. Max. Unit

trr

Reverse recovery time

Tj = 25 °C

IF = 0.5 A, Irr = 0.25 A, IR = 1 A

-

50

ns

IF = 1 A, dIF/dt = -50 A/μs, VR = 30 V

-

90

IRM

Reverse recovery current

Tj = 125 °C IF = 100 A, dIF/dt = -200 A/μs, VR = 200 V

-

18

A

Sfactor

Softness factor

-

0.3

tfr

Forward recovery time

Tj = 25 °C

IF = 100 A, dIF/dt = 200 A/μs, VFR = 1.1 x VF(max)

-

1400

ns

VFP

Forward recovery voltage

-

5

V

STTH20003

Characteristics

DS1796 - Rev 3

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