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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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IS43TR16640C датащи(PDF) 1 Page - Integrated Silicon Solution, Inc |
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IS43TR16640C датащи(HTML) 1 Page - Integrated Silicon Solution, Inc |
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1 / 89 page  IS43/46TR16640C, IS43/46TR16640CL IS43/46TR81280C, IS43/46TR81280CL Integrated Silicon Solution, Inc. – www.issi.com – 1 Rev. E 12/27/2024 128MX8, 64MX16 1Gb DDR3 SDRAM JANUARY 2025 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage (L): VDD and VDDQ = 1.35V + 0.1V, -0.067V - Backward compatible to 1.5V • High speed data transfer rates with system frequency up to 1066 MHz • 8 internal banks for concurrent operation • 8n-bit pre-fetch architecture • Programmable CAS Latency • Programmable Additive Latency: 0, CL-1,CL-2 • Programmable CAS WRITE latency (CWL) based on tCK • Programmable Burst Length: 4 and 8 • Programmable Burst Sequence: Sequential or Interleave • BL switch on the fly • Auto Self Refresh(ASR) • Self Refresh Temperature(SRT) • Refresh Interval: 7.8 µs (8192 cycles/64 ms) Tc= -40°C to 85°C 3.9 µs (8192 cycles/32 ms) Tc= 85°C to 105°C 1.95 µs (8192 cycles/16 ms) Tc= 105°C to 115°C 0.97 µs (8192 cycles/8 ms) Tc= 115°C to 125°C • Partial Array Self Refresh • Asynchronous RESET pin • TDQS (Termination Data Strobe) supported (x8 only) • OCD (Off-Chip Driver Impedance Adjustment) • Dynamic ODT (On-Die Termination) • Driver strength : RZQ/7, RZQ/6 (RZQ = 240 Ω ) • Write Leveling • Up to 200 MHz in DLL off mode • Operating temperature: Commercial (TC = 0°C to +95°C) Industrial (TC = -40°C to +95°C) Automotive, A1 (TC = -40°C to +95°C) Automotive, A2 (TC = -40°C to +105°C) Automotive, A25 (TC = -40°C to +115°C) Automotive, A3 (TC = -40°C to +125°C) OPTIONS • Configuration: 128Mx8 64Mx16 • Green Package: 96-ball BGA (9mm x 13mm) for x16 96-ball BGA (7.5mm x 13mm) for x16 78-ball BGA (8mm x 10.5mm) for x8 ADDRESS TABLE Parameter 128Mx8 64Mx16 Row Addressing A0-A13 A0-A12 Column Addressing A0-A9 A0-A9 Bank Addressing BA0-2 BA0-2 Page size 1KB 2KB Auto Precharge Addressing A10/AP A10/AP BL switch on the fly A12/BC# A12/BC# SPEED BIN Speed Option 125J 107M 093N Units JEDEC Speed Grade DDR3-1600J DDR3-1866M DDR3-2133N CL-nRCD-nRP 10-10-10 13-13-13 14-14-14 tCK tRCD,tRP(min) 12.5 13.91 13.09 ns Note: Faster speed options may be backward compatible to slower speed options. Refer to timing tables (8.3) Copyright © 2025 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that: a.) the risk of injury or damage has been minimized; b.) the user assume all such risks; and c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances |
Аналогичный номер детали - IS43TR16640C |
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Аналогичное описание - IS43TR16640C |
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