Data Sheet

ADRF5238

High Isolation, Silicon SPDT, Nonreflective Switch, 0.1GHz to 13GHz

Rev. 0

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FEATURES

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Frequency range: 100MHz to 13GHz

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Nonreflective, 50Ω design

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Low insertion loss

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1.0dB to 7GHz typical

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1.3dB to 13GHz typical

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High isolation

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49dB to 7GHz typical

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41dB to 13GHz typical

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High power handling (average)

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35dBm through path

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27dBm terminated path

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33dBm hot switching (RFC)

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High input linearity

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P0.1dB: 36dBm typical

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IP3: 60dBm typical

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Fast RF settling time 0.1dB: 220ns

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Single positive supply: 3.3V to 5V

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All off state control

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CMOS-/LVTTL-compatible

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12-lead, 2mm × 2mm, LFCSP_RT

APPLICATIONS

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Cellular infrastructure

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Wireless infrastructure

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Military radios, radars, and electronic counter measures (ECMs)

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Microwave radios and very small aperture terminals (VSATs)

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Test instrumentation

FUNCTIONAL BLOCK DIAGRAM

Figure 1. Functional Block Diagram

GENERAL DESCRIPTION

The ADRF5238 is a high isolation, nonreflective, 0.1GHz to 13GHz,

silicon, SPDT switch in the silicon process.

The ADRF5238 operates from 0.1GHz to 13GHz with an insertion

loss lower than 1.3dB and an isolation higher than 41dB at 13GHz.

The ADRF5238 has a nonreflective design and the RF ports are

internally terminated to 50Ω. The device has input power handling

capability of 35dBm for through path, 27dBm for terminated path

and 33dBm hot switching at the RFC pin.

The ADRF5238 requires a single-supply voltage (VDD) of 3.3V

to 5V. The ADRF5238 employs 1.8V complementary metal-oxide

semiconductor (CMOS)-compatible and 3.3V low-voltage transistor

logic (LVTTL)-compatible controls. The ADRF5238 has an enable

control to put both RF channels in an isolation state.

The ADRF5238 comes in a 12-lead, 2mm × 2mm, LFCSP_RT and

can operate from −40°C to +105°C.