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IS25LE512MG-RLLA2:PTY датащи(PDF) 108 Page - Integrated Silicon Solution, Inc

номер детали IS25LE512MG-RLLA2:PTY
подробное описание детали  SERIAL FLASH MEMORY 166/133MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  194 Pages
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производитель  ISSI [Integrated Silicon Solution, Inc]
домашняя страница  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512MG-RLLA2:PTY датащи(HTML) 108 Page - Integrated Silicon Solution, Inc

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IS25LE512MG
IS25WE512MG
Integrated Silicon Solution, Inc.- www.issi.com
108
Rev. A6
10/02/2025
8.26 RELEASE DEEP POWER DOWN (RDPD, ABh)
The Release Deep Power-down/Read Device ID instruction is a multi-purpose command. To release the device
from the deep power-down mode, the instruction is issued by driving the CE# pin low, shifting the instruction code
into the device and driving CE# high.
Releasing the device from Power-down mode will take the time duration of tRES1 before normal operation is restored
and other instructions are accepted. The CE# pin must remain high during the tRES1 time duration. If the Release
Deep Power-down/RDID instruction is issued while an Erase, Program or Write cycle is in progress (WIP=1) the
instruction is ignored and will not have any effects on the current cycle.
Figure 8.58 Release Power Down Mode Sequence In SPI Mode
tRES1
Instruction = ABh
CE #
SCK
SI
0
1
2
3
4
5
6
7
Mode 3
Mode 0
SO
High Impedance
Figure 8.59 Release Power Down Mode Sequence In QPI Mode
tRES1
ABh
CE#
SCK
IO[3:0]
0
1
Mode 3
Mode 0



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