BAR42 datasheet(3/7 Pages) STMICROELECTRONICS

номер детали	BAR42

подробное описание детали	Small signal Schottky diode

PDF	7 Pages

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производитель	STMICROELECTRONICS [STMicroelectronics]

домашняя страница	http://www.st.com

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3 / 7 page

DocID3288 Rev 5

3/7

BAR42, BAR43

Characteristics

Table 5. Dynamic characteristics (Tj = 25 °C)

Symbol

Test conditions

Min.

Typ.

Max.

Unit

Junction capacitance

Tj = 25 °C VR = 1 V F = 1 MHz

Reverse recovery time

IF = 10 mA IR = 10 mA

Tj = 25 °C Irr = 1 mA RL = 100 Ω

5pF

Detection efficiency

CL = 300 pF F = 45 MHz

Tj = 25 °C Vi = 2 V RL = 50 Ω

Figure 1. Forward voltage drop versus forward

current (typical values, low level)

Figure 2. Forward voltage drop versus forward

current (typical values, high level)

0.00

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

0.45

0.50

0.00E+0

2.00E-3

4.00E-3

6.00E-3

8.00E-3

1.00E-2

1.20E-2

1.40E-2

1.60E-2

1.80E-2

2.00E-2

(A)

(V)

T =25°C

T =50°C

T =100°C

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1E-3

1E-2

1E-1

5E-1

(A)

(V)

T =25°C

T =50°C

T =100°C

Figure 3. Reverse leakage current versus

reverse voltage applied (typical values)

Figure 4. Reverse leakage current versus

junction temperature

1E-2

1E-1

1E+0

1E+1

1E+2

I (µA)

V (V)

T =100°C

T =50°C

T =25°C

100

125

150

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

1E+4

I (µA)

V (V)

V =30V

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