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TPS2500 датащи(PDF) 21 Page - Texas Instruments |
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TPS2500 датащи(HTML) 21 Page - Texas Instruments |
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21 / 43 page ![]() 2 DISS AUX AUX USB USB USB 1 P V (I I ) 1 I r æ ö = ´ + - + ´ ç ÷ h è ø TPS2500, TPS2501 www.ti.com SLVS886C – OCTOBER 2008 – REVISED AUGUST 2010 USB Capacitance Connect the USB capacitance from USB to the reference ground plane. The USB capacitance is on the output of the power switch and provides energy for transient load steps. The TPS2500 does not require any USB capacitance for operation. Additional capacitance can be added on USB, but it is recommended to not exceed 220 mF to maintain adequate phase margin for the boost converter control loop. The combined output capacitance on AUX and USB should not exceed 500 mF. USB applications require a minimum of 120 mF on downstream-facing ports. ILIM and FAULT Resistors Connect the ILIM resistor from ILIM to the reference ground plane. The ILIM resistor programs the current-limit threshold of the USB power switch (see the Programming the Current-Limit Threshold Resistor section). The ILIM pin is the output of an internal linear regulator that provides a fixed 400-mV output. The recommended nominal resistor value using 1% resistors on ILIM is 16.1 k Ω ≤ RILIM ≤ 200 kΩ. This range should be adjusted accordingly if 1% resistors are not used. Do not overdrive ILIM with an external voltage or connect directly to GND. Connect the ILIM resistor as close to the TPS2500 as possible to minimize the effects of parasitics on device operation. Do not add external capacitance on the ILIM pin. The ILIM pin should not be left floating. Connect the FAULT resistor from the FAULT pin to an external voltage source such as VAUX or VIN. The FAULT pin is an open-drain output capable of sinking a maximum current of 10 mA continuously. The FAULT resistor should be sized large enough to limit current to under 10 mA continuously. Do not tie FAULT directly to an external voltage source. The maximum recommended voltage on FAULT is 6.5 V. The FAULT pin can be left floating if not used. Power Dissipation Power dissipation is an important consideration in any power device with integrated MOSFETs. Although there are internal thermal sensors that disable the device in the event of an overtemperature condition, it is still good design practice to calculate the maximum junction temperature and to maintain the maximum junction temperature under the recommended maximum of 125 °C. There are many ways to approximate the junction temperature of the device. One method is to calculate the junction temperature rise by multiplying the power dissipation of the device by the thermal resistance of the device package. The absolute junction temperature is approximated by the addition of the ambient temperature plus the calculated junction temperature rise: TJ = TA + (PDISS × qJA) ≤ 125°C where TA and TJ are in °C, qJA is in °C/W, and PDISS is in W. The maximum ambient temperature is often an application-specific requirement, such as 85°C maximum. The thermal resistance is mainly a function of the device package but is impacted by system-level considerations such as layout, heatsinking from the surrounding copper pours, the number of board layers, copper thickness, airflow, and surrounding power-dissipating devices (e.g., the power inductor). External equipment such as a thermal camera can help assess the overall thermal performance of a design. The thermal resistance value of 41.6 °C/W from the Dissipation Ratings table can be used as an initial estimate. The power dissipation of the device is the sum of the power dissipation in the boost converter plus the power dissipation in the USB power switch. This can be approximated by: where PDISS is in W, VAUX is in V, IAUX and IUSB are in A, h is the efficiency of the boost converter, and rUSB is in Ω. IAUX is the additional current powering auxiliary loads and does not include any current powering the USB load. Efficiency can be approximated from the efficiency graphs in the Application Curves section. This approach may be slightly pessimistic because it does not separate any power losses in the inductor from overall converter efficiency. Layout Recommendations Layout is an important design step due to the high switching frequency of the boost converter. Careful attention must be applied to the PCB layout to ensure proper function of the device and to obtain the specified performance. Potential issues resulting from poor layout techniques include wider line and load regulation tolerances, EMI noise issues, stability problems, and USB current-limit shifts. It is critical to provide a low-impedance ground path that minimizes parasitic inductance. Wide and short traces should be used in the high-current paths, and components should be placed as close to the device as possible. Copyright © 2008–2010, Texas Instruments Incorporated Submit Documentation Feedback 21 Product Folder Link(s): TPS2500 TPS2501 |
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