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TMUX6213 датащи(PDF) 26 Page - Texas Instruments

номер детали TMUX6213
подробное описание детали  TMUX621x 36V, Low-RON, 1:1 (SPST), 4-Channel Precision Switches with 1.8V Logic
PDF  45 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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TMUX6213 датащи(HTML) 26 Page - Texas Instruments

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8.3.6 Latch-Up Immune
Latch-up is a condition where a low impedance path is created between a supply pin and ground. This condition
is caused by a trigger (current injection or overvoltage), but once activated, the low impedance path remains
even after the trigger is no longer present. This low impedance path may cause system upset or catastrophic
damage due to excessive current levels. The latch-up condition typically requires a power cycle to eliminate the
low impedance path.
The TMUX621x family of devices are constructed on silicon on insulator (SOI) based process where an oxide
layer is added between the PMOS and NMOS transistor of each CMOS switch to prevent parasitic structures
from forming. The oxide layer is also known as an insulating trench and prevents triggering of latch up events
due to overvoltage or current injections. The latch-up immunity feature allows the TMUX621x family of switches
and multiplexers to be used in harsh environments. For more information on latch-up immunity refer to Using
Latch Up Immune Multiplexers to Help Improve System Reliability.
8.3.7 Ultra-Low Charge Injection
The TMUX621x devices have a transmission gate topology, as shown in Figure 8-1. Any mismatch in the stray
capacitance associated with the NMOS and PMOS causes an output level change whenever the switch is
opened or closed.
S
D
C
GDP
C
GDN
C
GSN
C
GSP
OFF
ON
OFF ON
Figure 8-1. Transmission Gate Topology
The TMUX621x contains specialized architecture to reduce charge injection on the Drain (Dx). To further reduce
charge injection in a sensitive application, a compensation capacitor (Cp) can be added on the Source (Sx). This
will ensure that excess charge from the switch transition will be pushed into the compensation capacitor on the
Source (Sx) instead of the Drain (Dx). As a general rule of thumb, Cp should be 20x larger than the equivalent
load capacitance on the Drain (Dx). Figure 8-2 shows charge injection variation with different compensation
capacitors on the Source side. This plot was captured on the TMUX6219 as part of the TMUX62xx family with a
100 pF load capacitance.
Figure 8-2. Charge Injection Compesation
TMUX6211, TMUX6212, TMUX6213
SCDS431D – OCTOBER 2020 – REVISED JULY 2024
www.ti.com
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Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: TMUX6211 TMUX6212 TMUX6213



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