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STTH8L02D-Y датащи(PDF) 5 Page - STMicroelectronics |
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STTH8L02D-Y датащи(HTML) 5 Page - STMicroelectronics |
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5 / 10 page ![]() STTH8L02D-Y Characteristics DocID030708 Rev 1 5/10 Figure 7: Peak reverse recovery current versus dIF / dt (typical values, per diode) Figure 8: Dynamic parameters versus junction temperature (per diode) Figure 9: Relative variation of thermal impedance junction to case total versus pulse duration Figure 10: Thermal resistance junction to ambient total versus copper surface under each tab (typical values) 0 4 8 12 16 0 50 100 150 200 250 300 350 400 450 500 dIF/dt(A/µs) IF = 4 A VR = 160 V Tj = 125 °C Tj = 25 °C IRM(A) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 25 50 75 100 125 150 Tj(°C) IRM QRR QRR; IRM[Tj] / QRR; IRM[Tj = 125 °C] I F =4A V R =160V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 Z th(j-c) / Rth(j-c) Single pulse tp(s) 0 20 40 60 80 100 120 0 1 2 3 4 5 6 7 8 9 10 Rth(j-a) (°C/W) PowerFLAT 5x6 Dual Island printed circuit board FR4, copper thickness: 35 µm SCu(cm²) |
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