Figure 9. Transient peak forward voltage versus dIF/dt

(typical values)

V (V)

FP

0

2

4

6

8

10

12

14

0

50

100

150

200

250

300

350

400

450

500

IF=IF(AV)

Tj=125 °C

dI /dt(A/µs)

F

Figure 10. Forward recovery time versus dIF/dt (typical

values)

t (ns)

fr

0

20

40

60

80

100

120

140

160

0

50

100

150

200

250

300

350

400

450

500

IF=IF(AV)

VFR=2.5V

Tj=125 °C

dI /dt(A/µs)

F

Figure 11. Junction capacitance versus reverse voltage

applied (typical values, per diode)

C(pF)

10

100

1

10

100

1000

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

V (V)

R

Figure 12. Thermal resistance junction to ambient versus

copper surface under tab (typical values)

0

10

20

30

40

50

60

70

80

0

5

10

15

20

25

30

35

40

Rth(j-a) (°C/W)

D²PAK

Epoxy printed board FR4, copper thickness = 35 µm

SCu(cm²)

Figure 13. Thermal resistance junction to ambient versus copper surface under tab (typical values)

0

10

20

30

40

50

60

70

80

90

100

0

5

10

15

20

25

30

35

40

SCu(cm²)

Rth(j-a) (°C/W)

DPAK

Epoxy printed circuit board, copper thickness: 35 µm

STTH5R06-Y

Characteristics (curves)

DS6874 - Rev 2

page 6/13