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THS4502/3 датащи(PDF) 2 Page - Texas Instruments

номер детали THS4502/3
подробное описание детали  WIDEBAND, LOW-DISTORTION, FULLY DIFFERENTIAL AMPLIFIERS
PDF  51 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
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THS4502/3 датащи(HTML) 2 Page - Texas Instruments

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ABSOLUTE MAXIMUM RATINGS
(1)
PACKAGE DISSIPATION RATINGS
RECOMMENDED OPERATING CONDITIONS
THS4504
THS4505
SLOS363D – AUGUST 2002 – REVISED MAY 2008 ......................................................................................................................................................... www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
Over operating free-air temperature range, unless otherwise noted.
UNIT
Supply voltage, VS
16.5 V
Input voltage, VI
±VS
Output current, IO
150 mA
Differential input voltage, VID
4 V
Continuous power dissipation
See Package Dissipation Ratings table
Maximum junction temperature, TJ
+150
°C
Maximum junction temperature, continuous operation, long-term reliability, TJ
(2)
+125
°C
Storage temperature range, Tstg
–65
°C to +150°C
Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds
+300
°C
(1)
The absolute maximum ratings under any condition is limited by the constraints of the silicon process. Stresses above these ratings may
cause permanent damage. Exposure to absolute maximum conditions for extended periods may degrade device reliability. These are
stress ratings only, and functional operation of the device at these or any other conditions beyond those specified is not implied.
(2)
The maximum junction temperature for continuous operation is limited by package constraints. Operation above this temperature may
result in reduced reliability and/or lifetime of the device.
POWER RATING(2)
PACKAGE
θ
JC (°C/W)
θ
JA (°C/W)
(1)
TA ≤ +25°C
TA = +85°C
D (8-pin)
38.3
97.5
1.02 W
410 mW
DGN (8-pin)
4.7
58.4
1.71 W
685 mW
DGK (8-pin)
54.2
260
385 mW
154 mW
(1)
This data was taken using the JEDEC standard High-K test PCB.
(2)
Power rating is determined with a junction temperature of +125
°C. This is the point where distortion starts to substantially increase.
Thermal management of the final PCB should strive to keep the junction temperature at or below +125
°C for best performance and long
term reliability.
MIN NOM
MAX
UNIT
Dual supply
±5
±7.5
Supply voltage
V
Single supply
4.5
5
15
Operating free-air temperature, TA
–40
+85
°C
2
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Copyright © 2002–2008, Texas Instruments Incorporated
Product Folder Link(s): THS4504 THS4505



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