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STPSC20065WY датащи(PDF) 1 Page - STMicroelectronics

номер детали STPSC20065WY
подробное описание детали  Automotive 650 V power Schottky silicon carbide diode
PDF  14 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
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November 2017
DocID029260 Rev 2
1/14
This is information on a product in full production.
www.st.com
STPSC20065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
Features
AEC-Q101 qualified
No reverse recovery charge in application
current range
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
ECOPACK®2 compliant component
PPAP capable
Operating Tj from -40 °C to 175 °C
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
20 A
VRRM
650 V
Tj (max.)
175 °C
VF (typ.)
1.30 V
A
K
A
K
K
DO-247
A
K
TO-220AC
D²PAK


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