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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STPS20120CT датащи(PDF) 3 Page - STMicroelectronics |
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STPS20120CT датащи(HTML) 3 Page - STMicroelectronics |
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3 / 14 page  DocID11212 Rev 4 3/14 STPS20120C Characteristics 14 Figure 1. Average forward power dissipation versus average forward current (per diode) Figure 2. Average forward current versus ambient temperature (δ = 0.5, per diode) Figure 3. Normalized avalanche power derating versus pulse duration (Tj = 125 °C) Figure 4. Relative variation of thermal impedance junction to case versus pulse duration Figure 5. Reverse leakage current versus reverse voltage applied (typical values, per diode) Figure 6. Junction capacitance vs. reverse voltage applied (typical values, per diode) |
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