Characteristics

STPS16170C

4/12

DocID12540 Rev 4

Figure 9. Thermal resistance junction to ambient versus copper surface under tab (D²PAK)

Figure 5. Reverse leakage current versus

reverse voltage applied (typical values,

per diode)

Figure 6. Junction capacitance versus reverse

voltage applied (typical values, per diode)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0

25

50

75

100

125

150

175

I

R(µA)

T

j=150°C

T

j=125°C

T

j=25°C

T

j=75°C

T

j=175°C

VR(V)

10

100

1000

1

10

100

1000

C(pF)

F=1MHz

V

OSC=30mVRMS

T

j=25°C

VR(V)

Figure 7. Forward voltage drop vs. forward

current (per diode)

Figure 8. Thermal resistance junction to

ambient versus copper surface under tab

(DPAK)

0.0

10.0

20.0

30.0

40.0

50.0

60.0

70.0

80.0

90.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

I

FM(A)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)

Tj=125°C

(Typical values)

VFM(V)