Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

1.E+06

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

VR(V)

IR(µA)

Tj = 150 °C

Tj = 125 °C

Tj = 25 °C

Tj = 100 °C

Tj = 75 °C

Tj = 50 °C

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

1000

10000

1

10

100

1000

VR(V)

C(pF)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25° C

Figure 7. Forward voltage drop versus forward current

(per diode, low level)

IF (A)

0

5

10

15

20

25

30

35

40

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Tj = 25 °C

(Maximum values)

Tj=125°C

(Maximum values)

Tj = 125 °C

(Maximum values)

Tj=125°C

(Typical values)

Tj = 125 °C

(Typical values)

VF(V)

Figure 8. Forward voltage drop versus forward current

(per diode, high level)

0.1

1.0

10.0

100.0

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

VF(V)

IF (A)

Tj = 25 °C

(Maximum values)

Tj = 125 °C

(Maximum values)

Tj = 125 °C

(Typical values)

STPS80170C

Characteristics (curves)

DS4415 - Rev 3

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