Figure 5. Reverse leakage current versus reverse voltage

applied (typical values, per diode)

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

1.E+04

1.E+05

0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 160 170

IR(µA)

Tj = 75 °C

Tj = 100 °C

Tj = 125 °C

Tj = 150 °C

Tj = 50 °C

Tj = 25 °C

VR(V)

Figure 6. Junction capacitance versus reverse voltage

applied (typical values, per diode)

100

1000

10000

1

10

100

1000

C(pF)

VR(V)

F = 1 MHz

VOSC = 30 mVRMS

Tj = 25 °C

Figure 7. Forward voltage drop versus forward current

(per diode, low level)

0

5

10

15

20

25

30

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

Tj = 125 °C

(typical values)

Tj = 125 °C

(maximum values)

Tj = 25 °C

(maximum values)

VF(V)

IF(A)

Figure 8. Forward voltage drop versus forward current

(per diode, high level)

1

10

100

1000

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4

Tj = 125 °C

(typical values)

Tj = 125 °C

(maximum values)

Tj = 25 °C

(maximum values)

VF(V)

IF(A)

STPS61170C

Characteristics (curves)

DS4414 - Rev 3

page 4/9