DocID023771 Rev 3

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FERD30M45C

Characteristics

10

To evaluate the conduction losses use the following equation:

P = 0.27 x IF(AV) + 0.012 IF

2

(RMS))

Table 4. Static electrical characteristics (per diode)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

IR

(1)

Reverse leakage current

Tj = 25 °C

VR = VRRM

600

µA

Tj = 125 °C

25

50

mA

VF

(2)

Forward voltage drop

Tj = 125 °C

IF = 7.5 A

0.305

0.350

V

Tj = 125 °C

IF = 10 A

0.350

0.395

Tj = 25 °C

IF = 15 A

0.420

0.470

Tj = 125 °C

0.420

0.450

1.

Pulse test: tp = 5 ms, δ < 2%

2.

Pulse test: tp = 380 µs, δ < 2%

Figure 1. Average forward power dissipation

versus average forward current (per diode)

Figure 2. Average forward current versus

ambient temperature (

δ = 0.5, per diode)

0

2

4

6

8

10

12

0

2

4

6

8

101214

16

18

20

PF(AV)(W)

IF(AV)(A)

T

δ=tp/T

tp

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1.0

0

2

4

6

8

10

12

14

16

18

0

25

50

75

100

125

150

175

Tamb(°C)

IF(AV)(A)

T

δ=tp/T

tp

R

R

t

t

h

h

(

(

j

j

-

-

a

c

)

)

=

Figure 3. Junction capacitance versus reverse

voltage applied (typical values, per diode)

Figure 4. Forward voltage drop versus forward

current (per diode)

C(pF)

100

1000

10000

1

10

100

VR(V)

F=1 MHz

VOSC=30 mVRMS

Tj=25 °C

0.1

1.0

10.0

100.0

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

VFM(V)

I

FM(A)

Tj=25°C

(Maximum values)

Tj=125°C

(Maximum values)

Tj=125°C

(Typical values)