OPA855 datasheet(4/41 Pages) TI2

номер детали	OPA855

подробное описание детали	OPA855 8GHz Gain Bandwidth Product, Gain of 7V/V Stable, Bipolar Input Amplifier

PDF	41 Pages

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производитель	TI2 [Texas Instruments]

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4 / 41 page

PAD

IN-

IN+

VS-

OUT

VS+

Figure 5-2. Bare Die Package

Table 5-2. Bond Pad Functions

PAD

TYPE

DESCRIPTION

NAME

NO.

Input

Feedback connection to output of amplifier

IN–

Input

Inverting input

IN+

Input

Noninverting input

2,5,6,

—

Do not connect

OUT

Output

Amplifier output

Input

Power down connection. PD = logic low = power off mode; PD = logic high = normal operation.

VS–

7,8

—

Negative voltage supply

VS+

10,11

—

Positive voltage supply

Backside

—

Connect to VS–

Table 5-3. Bare Die Information

DIE THICKNESS

BACKSIDE FINISH

BACKSIDE POTENTIAL

BOND PAD

METALLIZATION

381 μm

Silicon with backgrind

Wafer backside is electrically connected to VS–

AlCu

Table 5-4. Bond Pad Coordinates of Bare Die Version in Microns

PAD NUMBER

PAD NAME

X-MIN

Y-MIN

X-MAX

Y-MAX

14.5

537.4

79.5

602.4

14.5

379

79.5

444

IN–

14.5

227

79.5

292

IN+

14.5

68.6

79.5

133.6

296.725

34.825

361.725

99.825

421.725

34.825

486.725

99.825

VS–

545.5

93.8

610.5

158.8

VS–

545.5

178.8

610.5

243.8

OUT

545.5

303

610.5

368

VS+

545.5

427.2

610.5

492.2

VS+

545.5

512.2

610.5

577.2

421.325

571.175

486.325

636.175

297.125

571.175

362.125

636.175

OPA855

SBOS622D – JULY 2018 – REVISED MAY 2025

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