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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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STM8AF6268ITCU датащи(PDF) 59 Page - STMicroelectronics |
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STM8AF6268ITCU датащи(HTML) 59 Page - STMicroelectronics |
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59 / 99 page  DocID14952 Rev 11 59/99 STM8AF6246/48/66/68 Electrical characteristics 93 Figure 17. HSE oscillator circuit diagram HSE oscillator critical gm formula The crystal characteristics have to be checked with the following formula: gm gmcrit » where gmcrit can be calculated with the crystal parameters as follows: gmcrit 2 Π × HSE f × () 2 Rm × 2Co C + () 2 = Rm: Notional resistance (see crystal specification) Lm: Notional inductance (see crystal specification) Cm: Notional capacitance (see crystal specification) Co: Shunt capacitance (see crystal specification) CL1 = CL2 = C: Grounded external capacitance 10.3.4 Internal clock sources and timing characteristics Subject to general operating conditions for VDD and TA. High speed internal RC oscillator (HSI) Table 30. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fHSI Frequency - - 16 - MHz |
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