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STM8AF6268 датащи(PDF) 60 Page - STMicroelectronics |
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STM8AF6268 датащи(HTML) 60 Page - STMicroelectronics |
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60 / 99 page ![]() Electrical characteristics STM8AF6246/48/66/68 60/99 DocID14952 Rev 11 Figure 18. Typical HSI frequency vs VDD Low speed internal RC oscillator (LSI) Subject to general operating conditions for VDD and TA. ACCHS HSI oscillator user trimming accuracy Trimmed by the application for any VDD and TA conditions -1(1) -1(1) % -0.5(1) -0.5(1) HSI oscillator accuracy (factory calibrated) 3.0 V ≤ VDD ≤ 5.5 V, -40 °C ≤ TA ≤ 150 °C -5 - 5 3.0V ≤ VDD ≤ 5.5V, -40°C ≤ TA ≤ 125 °C -2.5(2) -2.5(2) tsu(HSI) HSI oscillator wakeup time -- - 2(3) µs 1. Depending on option byte setting (OPT3 and NOPT3) 2. These values are guaranteed for STM8AF62x6ITx order codes only. 3. Guaranteed by characterization, not tested in production Table 31. LSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit fLSI Frequency - 112 128 144 kHz tsu(LSI) LSI oscillator wakeup time - - - 7(1) 1. Data based on characterization results, not tested in production. µs Table 30. HSI oscillator characteristics Symbol Parameter Conditions Min Typ Max Unit -3% -2% -1% 0% 1% 2% 3% 2.5 3 3.5 4 4.5 5 5.5 6 VDD [V] -40°C 25°C 85°C 125°C |
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