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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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ESM2012DV датащи(PDF) 1 Page - STMicroelectronics |
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ESM2012DV датащи(HTML) 1 Page - STMicroelectronics |
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1 / 8 page  ESM2012DV NPN DARLINGTON POWER MODULE s HIGH CURRENT POWER BIPOLAR MODULE s VERY LOW Rth JUNCTION TO CASE s SPECIFIED ACCIDENTAL OVERLOAD AREAS s ULTRAFAST FREEWHEELING DIODE s ISOLATED CASE (2500V RMS) s EASY TO MOUNT s LOW INTERNAL PARASITIC INDUCTANCE INDUSTRIAL APPLICATIONS: s MOTOR CONTROL s UPS s DC/DC & DC/AC CONVERTERS INTERNAL SCHEMATIC DIAGRAM September 1997 ISOTOP ABSOLUTE MAXIMUM RATINGS Symbol Parame ter Value Unit VCEV Collector-Emitter Voltage (VBE = -5 V) 150 V VCEO(sus) Collector-Emitter Voltage (IB = 0) 120 V VEBO Emitter-Base Voltage (IC =0) 7 V IC Collector Current 120 A ICM Collector Peak Current (tp = 10 ms) 180 A IB Base Current 2 A IBM Base Peak Current (tp =10 ms) 4 A Ptot Tot al Dissipation at Tc =25 oC 175 W Tstg Storage Temperature -55 to 150 oC Tj Max. Ope ra ting Ju nction Temperature 150 oC VISO Insulation Withstand Voltage (AC-RMS) 2500 oC 1/8 |
Аналогичный номер детали - ESM2012DV |
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Аналогичное описание - ESM2012DV |
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