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STBR3012 датащи(PDF) 4 Page - STMicroelectronics |
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STBR3012 датащи(HTML) 4 Page - STMicroelectronics |
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4 / 12 page ![]() Figure 5. Junction capacitance versus reverse voltage applied (typical values) 10 100 1000 1 10 100 1000 10000 VR(V) C(pF) F = 1 MHz Vosc = 30 mVRMS Tj = 25 °C Figure 6. Relative variation of non-repetitive peak surge forward current versus pulse duration (sinusoidal waveform) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.1 1.0 10.0 IFSM(tp) / IFSM(10ms) tp(ms) Figure 7. Relative variation of non-repetitive peak surge forward current versus initial junction temperature (sinusoidal waveform) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 25 50 75 100 125 150 175 IFSM(Tj) / IFSM(25°C) Tj(°C) Figure 8. Thermal resistance junction to ambient versus copper surface under tab (typical values, epoxy printed board FR4, eCu = 35µm) (D²PAK HV) 0 10 20 30 40 50 60 70 80 0 5 10 15 20 25 30 35 40 SCu(cm²) Rth(j-a) (°C/W) STBR3012 Characteristics (curves) DS11909 - Rev 2 page 4/12 |
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