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EF9345 датащи(PDF) 4 Page - STMicroelectronics

номер детали EF9345
подробное описание детали  HMOS2 SINGLE CHIP SEMI-GRAPHIC DISPLAY PROCESSOR
PDF  38 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

EF9345 датащи(HTML) 4 Page - STMicroelectronics

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ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC*
Supply Voltage
-0.3, 7.0
V
Vin*
Input Voltage
-0.3, 7.0
V
TA
Operating Temperature
0, +70
oC
Tstg
Storage Temperature
-55, +150
oC
PDm
Maximum Power Dissipation
0.75
W
* With respect to Vss.
Stresses above those hereby listed may cause permanent damage to the device. The ratings are stress ones only and functional operation of
the device at these or any conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to maximum
rating conditions for extended periods may affect reliability. Standard MOS circuits handling procedure should be used to avoid possible damage
to the device.
ELECTRICAL CHARACTERISTICS
VCC = 5.0V
±5%, VSS =0V, TA = 0 to +70°C, unless otherwise specified.
Symbol
Parameter
Min.
Typ.
Max.
Unit
VCC
Supply Voltage
4.75
5
5.25
V
VIL
Input Low Voltage
-0.3
0.8
V
VIH
Input High Voltage :
CLK
Other Inputs
2.2
2
VCC
VCC
V
IIN
Input Leakage Current
10
µA
VOH
Output High Voltage (Iload = -500
µA)
2.4
V
VOL
Output Low Voltage : Iload = 4mA ; AD(0:7), ADM(0:7), AM(8:13)
Iload = 1mA ; Other Outputs
0.4
0.4
V
PD
Power Dissipation
250
mW
CIN
Input Capacitance
15
pF
ITSI
Three State (Off State) Input Current
10
µA
EF9345
4/38



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