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INA188IDRG4 датащи(PDF) 31 Page - Texas Instruments |
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INA188IDRG4 датащи(HTML) 31 Page - Texas Instruments |
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31 / 41 page ![]() 31 INA188 www.ti.com SBOS632 – SEPTEMBER 2015 Product Folder Links: INA188 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated 11 Device and Documentation Support 11.1 Device Support 11.1.1 Development Support Table 4. Table 1. Design Kits and Evaluation Modules NAME PART NUMBER TYPE DIP Adapter Evaluation Module DIP-ADAPTER-EVM Evaluation Module and Boards Universal Instrumentation Amplifier Evaluation Module INAEVM Evaluation Module and Boards Table 5. Table 2. Development Tools NAME PART NUMBER TYPE Calculate Input Common-Mode Range of Instrumentation Amplifiers INA-CMV-CALC Calculation Tools SPICE-Based Analog Simulation Program TINA-TI Circuit Design and Simulation 11.2 Documentation Support 11.2.1 Related Documentation OPA188 Data Sheet, SBOS642 OPA330 Data Sheet, SBOS432 REF3225 Data Sheet, SBVS058 Circuit Board Layout Techniques, SLOA089 11.3 Community Resources The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use. TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers. Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support. 11.4 Trademarks E2E is a trademark of Texas Instruments. Bluetooth is a registered trademark of Bluetooth SIG, Inc. PhotoMOS is a registered trademark of Panasonic Electric Works Europe AG. All other trademarks are the property of their respective owners. 11.5 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 11.6 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. |
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