ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (

∗∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V

Id = 2.5 A

Vgen = 10 V

Rgen = 10

Ω

(see figure 3)

50

60

150

40

100

100

300

80

ns

ns

ns

ns

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V

Id = 2.5 A

Vgen = 10 V

Rgen = 1000

Ω

(see figure 3)

150

400

3900

1100

250

600

5000

1600

ns

ns

ns

ns

(di/dt)on

Turn-on Current Slope

VDD = 15 V

ID = 2.5 A

Vin = 10 V

Rgen = 10

Ω

35

A/

µs

Qi

Total Input Charge

VDD = 12 V

ID = 2.5 A

Vin = 10 V

18

nC

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VSD (

∗)

Forward On Voltage

ISD = 2.5 A

VIN =0

1.6

V

trr (

∗∗)

Qrr (

∗∗)

IRRM (

∗∗)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 2.5 A

di/dt = 100 A/

µs

VDD = 30 V

Tj = 25

o C

(see test circuit, figure 5)

150

0.3

5.7

ns

µC

A

PROTECTION

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Ilim

Drain Current Limit

Vin = 10 V

VDS = 13 V

Vin = 5 V

VDS = 13 V

3.5

3.5

5

5

7

7

A

A

tdlim (

∗∗) Step Response

Current Limit

Vin = 10 V

Vin = 5 V

15

40

20

60

µs

Tjsh (

∗∗) Overtemperature

Shutdown

150

oC

Tjrs (

∗∗)

Overtemperature Reset

135

oC

Igf (

∗∗)

Fault Sink Current

Vin = 10 V

VDS = 13 V

Vin = 5 V

VDS = 13 V

50

20

mA

Eas (

∗∗)

Single Pulse

Avalanche Energy

starting Tj = 25

oC

VDD = 20 V

Vin = 10 V

Rgen = 1 K

Ω L = 30 mH

0.2

J

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

∗∗) Parametes guaranteed by design/characterization

VNP5N07

3/11