ELECTRICAL CHARACTERISTICS (continued)

SWITCHING (

∗∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V

Id = 10 A

Vgen = 10 V

Rgen = 10

Ω

(see figure 3)

90

240

430

150

180

400

800

300

ns

ns

ns

ns

td(on)

tr

td(off)

tf

Turn-on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

VDD = 15 V

Id = 10 A

Vgen = 10 V

Rgen = 1000

Ω

(see figure 3)

800

1.5

6

3.5

1200

2.2

10

5.5

ns

µs

µs

µs

(di/dt)on

Turn-on Current Slope

VDD = 15 V

ID = 10 A

Vin = 10 V

Rgen = 10

Ω

60

A/

µs

Qi

Total Input Charge

VDD = 12 V

ID = 10 A

Vin = 10 V

60

nC

SOURCE DRAIN DIODE

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VSD (

∗)

Forward On Voltage

ISD = 10 A

Vin = 0

1.6

V

trr(

∗∗)

Qrr(

∗∗)

IRRM(

∗∗)

Reverse Recovery

Time

Reverse Recovery

Charge

Reverse Recovery

Current

ISD = 10 A

di/dt = 100 A/

µs

VDD = 30 V

Tj = 25

oC

(see test circuit, figure 5)

165

0.55

6.5

ns

µC

A

PROTECTION

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Ilim

Drain Current Limit

Vin = 10 V

VDS = 13 V

Vin = 5 V

VDS = 13 V

14

14

20

20

28

28

A

A

tdlim(

∗∗)

Step Response

Current Limit

Vin = 10 V

Vin = 5 V

29

70

60

140

µs

µs

Tjsh(

∗∗)

Overtemperature

Shutdown

150

oC

Tjrs(

∗∗)

Overtemperature Reset

135

oC

Igf(

∗∗)

Fault Sink Current

Vin = 10 V

Vin = 5 V

50

20

mA

mA

Eas(

∗∗)

Single Pulse

Avalanche Energy

starting Tj = 25

oC

VDD = 20 V

Vin = 10 V

Rgen = 1 K

Ω L = 10 mH

0.95

J

(

∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %

(

∗∗) Parameters guaranteed by design/characterization

VNP20N07

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