VNP10N06 datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

ABSOLUTE MAXIMUM RATING

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (Vin = 0)

Internally Clamped

Vin

Input Voltage

Internally Clamped

Iin

Input Current

± 20

Drain Current

Internally Limited

Reverse DC Output Current

-15

Vesd

Electrostatic Discharge (C= 100 pF, R=1.5 K

Ω)

4000

Ptot

Total Dissipation at Tc = 25

oC42

Operating Junction Temperature

Internally Limited

Case Operating Temperature

Internally Limited

Tstg

Storage Temperature

-55 to 150

THERMAL DATA

Rthj-case

Rthj-amb

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

62.5

oC/W

ELECTRICAL CHARACTERISTICS (Tcase = 25

oC unless otherwise specified)

OFF

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VCLAMP

Drain-source Clamp

Voltage

ID = 200 mA

Vin = 0

506070

VIL

Input Low Level

Voltage

ID = 100

µA

VDS = 16 V

1.5

VIH

Input High Level

Voltage

RL = 27

Ω

VDD = 16 V

VDS = 0.5 V

3.2

VINCL

Input-Source Reverse

Clamp Voltage

Iin = -1 mA

Iin = 1 mA

-1

-0.3

IDSS

Zero Input Voltage

Drain Current (Vin = 0)

VDS = 50 V

Vin = VIL

VDS < 35 V

Vin = VIL

250

100

µA

IISS

Supply Current from

Input Pin

VDS = 0 V

Vin = 5 V

150

300

µA

ON (

∗)

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

RDS(on)

Static Drain-source On

Resistance

Vin = 7 V

ID = 1 A

TJ < 125

0.15

0.3

Ω

DYNAMIC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Coss

Output Capacitance

VDS = 13 V

f = 1 MHz

Vin = 0

350

500

VNP10N06

2/11

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