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INA159 датащи(PDF) 7 Page - Texas Instruments |
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INA159 датащи(HTML) 7 Page - Texas Instruments |
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7 / 38 page ![]() 7.5 Electrical Characteristics (continued) at TA = 25°C, VS = ±15 V, RL = 10 kΩ, connected to ground, VREF = 0 V, VCM = 0 V, and G = 1 (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT REFERENCE INPUT RIN Input impedance 10 kΩ Input current 80 µA Reference input voltage (V–) (V+) V Gain to output 1 V/V Reference gain error VO = ±10 V, inside the voltage swing range 0.01 0.05 % POWER SUPPLY IQ Quiescent current (7) VIN = 0 V 6.2 6.6 mA TA = –40°C to +125°C 8.9 (1) Total offset, referred-to-input (RTI): VOS = (VOSI) + (VOSO / G). (2) Specified by characterization. Not tested in production. (3) Offset drifts are uncorrelated. Input-referred offset drift is calculated using: ΔVOS(RTI) = √[ΔVOSI 2 + (ΔVOSO / G)2]. (4) Input voltage range of the input stage. The input range depends on the common-mode voltage, differential voltage, gain, and reference voltage; see Figure 7-12. (5) The values specified for G > 1 do not include the effects of the external gain resistor, RG. (6) Thermal effects can degrade input stage nonlinearity and thus can scale with gain; See Figure 9-5. (7) This parameter is tested in a high speed automatic test environment and does not measure the thermal effects with a longer a time constant. The thermal effect depends on supply voltage, layout, heat sinking and air flow conditions. (8) Total RTI voltage noise is equal to: eN(RTI) = √[eNI 2 + (eNO / G)2]. (9) Input current noise density specified for unbalanced input impedance. Bias current cancellation improves noise performance for balanced systems; See Figure 7-25. www.ti.com INA849 SBOS945B – NOVEMBER 2020 – REVISED APRIL 2021 Copyright © 2021 Texas Instruments Incorporated Submit Document Feedback 7 Product Folder Links: INA849 |
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