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INA159 датащи(PDF) 21 Page - Texas Instruments

номер детали INA159
подробное описание детали  INA821 35-μV Offset, 7-nV/√Hz Noise, Low-Power, Precision Instrumentation Amplifier
PDF  50 Pages
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производитель  TI2 [Texas Instruments]
домашняя страница  https://www.ti.com
Logo TI2 - Texas Instruments

INA159 датащи(HTML) 21 Page - Texas Instruments

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Frequency (Hz)
0
20
40
60
80
100
120
140
10M
100M
1G
10G
D049
Frequency (Hz)
0
20
40
60
80
100
120
10M
100M
1G
10G
D048
EMIRR (dB)
2
RF _ PEAK
20
OS
P
V
V
10
100 mV
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21
INA821
www.ti.com
SBOS893D – AUGUST 2018 – REVISED JUNE 2020
Product Folder Links: INA821
Submit Documentation Feedback
Copyright © 2018–2020, Texas Instruments Incorporated
8.3.1.1 Gain Drift
The stability and temperature drift of the external gain setting resistor (RG) also affects gain. The contribution of
RG to gain accuracy and drift is determined from Equation 1.
The best gain drift of 5 ppm/
℃ (maximum) is achieved when the INA821 uses G = 1 without RG connected. In
this case, gain drift is limited by the slight mismatch of the temperature coefficient of the integrated 10-kΩ
resistors in the differential amplifier (A3). At gains greater than 1, gain drift increases as a result of the individual
drift of the 24.7-kΩ resistors in the feedback of A1 and A2 relative to the drift of the external gain resistor (RG.)
The low temperature coefficient of the internal feedback resistors significantly improves the overall temperature
stability of applications using gains greater than 1 V/V over alternate options.
Low resistor values required for high gain make wiring resistance an important consideration. Sockets add to the
wiring resistance and contribute additional gain error (such as a possible unstable gain error) at gains of
approximately 100 or greater. To maintain stability, avoid parasitic capacitance of more than a few picofarads at
RG connections. Careful matching of any parasitics on the RG pins maintains optimal CMRR over frequency; see
Figure 17.
8.3.2 EMI Rejection
Texas Instruments developed a method to accurately measure the immunity of an amplifier over a broad
frequency spectrum extending from 10 MHz to 6 GHz. This method uses an EMI rejection ratio (EMIRR) to
quantify the ability of the INA821 to reject EMI. The offset resulting from an input EMI signal is calculated using
Equation 2:
where
VRF_PEAK is the peak amplitude of the input EMI signal.
(2)
Figure 56 and Figure 57 show the INA821 EMIRR graph for differential and common-mode EMI rejection across
this frequency range. Table 3 lists the EMIRR values for the INA821 at frequencies commonly encountered in
real-world applications. Applications listed in Table 3 are centered on or operated near the particular frequency
shown. Depending on the end-system requirements, additional EMI filters may be required near the signal inputs
of the system. Incorporating known good practices, such as using short traces, low-pass filters, and damping
resistors combined with parallel and shielded signal routing, may be required.
Figure 56. Common-Mode EMIRR Testing
Figure 57. Differential-Mode EMIRR Testing



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