6.5 Electrical Characteristics

at TA = 25 °C, VS = 5 V, VSENSE = VIN+ – VIN– = 0.5 V / Gain, VCM = VIN– = 48 V (unless otherwise noted)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

INPUT

CMRR

Common-mode rejection ratio

VCM = 2.7 V to 120 V, TA = –40 °C to +125 °C

120

140

dB

f = 50 kHz

85

Vos

Offset voltage, input referred

15

±150

µV

dVos/dT Offset voltage drift

TA = –40 °C to +125 °C

1

µV/

℃

PSRR

Power supply rejection ratio,

input refered

VS = 2.7 V to 20 V, TA = –40 °C to +125 °C

1

±10

µV/V

IB

Input bias current

IB+, VSENSE = 0 mV

10

20

30

µA

IB–, VSENSE = 0 mV

10

20

30

OUTPUT

G

Gain

A1 devices

20

V/V

A2 devices

50

A3 devices

100

A4 devices

200

A5 devices

500

Gain error

GND + 50 mV ≤ VOUT ≤ VS – 200 mV

0.1

±0.5

%

Gain error drift

TA = –40 °C to +125 °C

2.5

20 ppm/°C

Nonlinearity error

0.01

%

Maximum capacitive load

No sustained oscillations, no isolation resistor

500

pF

VOLTAGE OUTPUT

Swing to VS power supply rail RLOAD = 10 kΩ, TA = –40 °C to +125 °C

VS – 0.07

VS – 0.2

V

Swing to ground

RLOAD = 10 kΩ, VSENSE = 0 V, TA = –40 °C to

+125 °C

0.005

0.025

V

FREQUENCY RESPONSE

BW

Bandwidth

A1 devices, CLOAD = 5 pF, VSENSE = 200 mV

1100

kHz

A2 devices, CLOAD = 5 pF, VSENSE = 80 mV

1100

A3 devices, CLOAD = 5 pF, VSENSE = 40 mV

900

A4 devices, CLOAD = 5 pF, VSENSE = 20 mV

850

A5 devices, CLOAD = 5 pF, VSENSE = 8 mV

800

SR

Slew rate

2

V/µs

Settling time

VOUT =4 V ± 0.1 V step, output settles to 0.5%

9

µs

VOUT =4 V ± 0.1 V step, output settles to 1%

5

NOISE

Ven

Voltage noise density

50

nV/√Hz

POWER SUPPLY

VS

Supply voltage

TA = –40 °C to +125 °C

2.7

20

V

IQ

Quiescent current

370

500

µA

TA = –40 °C to +125 °C

600

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SBOSA19 – OCTOBER 2020

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