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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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L9945TR датащи(PDF) 29 Page - STMicroelectronics |
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L9945TR датащи(HTML) 29 Page - STMicroelectronics |
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29 / 144 page  Figure 15. H-bridge driving configurations GAPG0102161245CFT M GND Rshunt M GND Q1 Q3 Rshunt GND Q4 Rshunt OFF OFF OFF OFF (Active) Freewheeling low-side (forward) (Active) Freewheeling low-side (reverse) High impedance NPWM = ‘x’; DIR = ‘x’; HBx_AFW=’x’; HiZ=’1' Out1(HB+) CH3 CH1 CH3_OC Q3 Q1 M Out2(HB-) CH4_OC CH4 CH2 Q2 Out1(HB+) CH3_OC CH3 CH1 Q4 Q2 Out2(HB-) CH4 CH2 CH4_OC HBx_AFW=’0' -> Freewheel through Q3 diode HBx_AFW=’1' -> Freewheel through Q3 MOSFET NPWM = ‘1’; DIR = ‘0’; HiZ=’0' HBx_AFW=’0' -> Freewheel through Q3 diode HBx_AFW=’1' -> Freewheel through Q3 MOSFET NPWM = ‘1’; DIR = ‘1’; HiZ=’0' Out1(HB+) CH3_OC CH3 CH1 Q3 Q1 Q4 Q2 Out2(HB-) CH4_OC CH4 CH2 M GND Rshunt M GND Rshunt Out1(HB+) CH3 CH1 CH3_OC Q3 Q1 Q4 Q2 Out2(HB-) CH4_OC CH4 CH2 Out1(HB+) CH3_OC CH3 CH1 Q3 Q1 Q4 Q2 Out2(HB-) CH4_OC CH4 CH2 NPWM = ‘0’; DIR = ‘0’; HBx_AFW=’x’; HiZ=’0' NPWM = ‘0’; DIR = ‘1’; HBx_AFW=’x’; HiZ=’0' VBR Rshunt VBR Rshunt CH1_OC CH2_OC VBR Rshunt CH1_OC CH2_OC VBR Rshunt CH1_OC CH2_OC VBR Rshunt CH1_OC CH2_OC 5.5.2 H-Bridge diagnostics H-bridge status can be monitored by reading each channel diagnostic as if they operated independently (refer to Section 6.2: Diagnostics overview). However, different OC sensing strategies can be implemented, as discussed in Overcurrent detection. While in H-Bridge configuration, an extended set of values is available for OFF state diagnostic timer (tDIAG), as shown in H-Bridge OFF state diagnostic timings. 5.5.3 H-bridge dead time To prevent shoot-through (e.g. Q1 and Q3 ON) it's possible to choose different dead time values for both H- bridges independently. Such parameters are selectable via SPI through the HBx_dead_time bit according to the following table. L9945 Functional description DS12275 - Rev 10 page 29/144 |
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